Combinatorial growth of Si nanoribbons

Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of saw-like edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth

Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method

Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this study, we demonstrated an AlN template with many voids grown on AlN nanorods made by polarity selective epitaxy and etching methods. We introduced a low V/III ratio and NH$_3$ pulsed growth method to demonstrate high-quality coalesced AlN templates grown on AlN nanorods in a metal organic chemical vapor deposition reactor. The crystal quality and residual strain of AlN were enhanced by the void formations. It is expected that this growth method can contribute to the demonstration of high-performance deep UV LEDs and transistors

Electrical spin injection and detection in an InAs quantum well

We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring NiFe electrode. The observed spin diffusion length is 1.8 um at 20 K. The injected spin polarization across the NiFe/InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Our experimental results will contribute significantly to the realization of a practical spin field effect transistor

Controlling the Magnetic Anisotropy of the van der Waals Ferromagnet Fe3GeTe2 through Hole Doping.

Identifying material parameters affecting properties of ferromagnets is key to optimized materials that are better suited for spintronics. Magnetic anisotropy is of particular importance in van der Waals magnets, since it not only influences magnetic and spin transport properties, but also is essential to stabilizing magnetic order in the two-dimensional limit. Here, we report that hole doping effectively modulates the magnetic anisotropy of a van der Waals ferromagnet and explore the physical origin of this effect. Fe3-xGeTe2 nanoflakes show a significant suppression of the magnetic anisotropy with hole doping. Electronic structure measurements and calculations reveal that the chemical potential shift associated with hole doping is responsible for the reduced magnetic anisotropy by decreasing the energy gain from the spin-orbit induced band splitting. Our findings provide an understanding of the intricate connection between electronic structures and magnetic properties in two-dimensional magnets and propose a method to engineer magnetic properties through doping

Deterministic creation and deletion of a single magnetic skyrmion observed by direct time-resolved X-ray microscopy

Spintronic devices based on magnetic skyrmions are a promising candidate for next-generation memory applications due to their nanometre-size, topologically-protected stability and efficient current-driven dynamics. Since the recent discovery of room-temperature magnetic skyrmions, there have been reports of current-driven skyrmion displacement on magnetic tracks and demonstrations of current pulse-driven skyrmion generation. However, the controlled annihilation of a single skyrmion at room temperature has remained elusive. Here we demonstrate the deterministic writing and deleting of single isolated skyrmions at room temperature in ferrimagnetic GdFeCo films with a device-compatible stripline geometry. The process is driven by the application of current pulses, which induce spin-orbit torques, and is directly observed using a time resolved nanoscale X-ray imaging technique. We provide a current-pulse profile for the efficient and deterministic writing and deleting process. Using micromagnetic simulations, we also reveal the microscopic mechanism of the topological fluctuations that occur during this process.Comment: 27 pages, 4 figure